IRL40S2

IRL40S212 vs IRL40S212-ND vs IRL40S212PBF

 
PartNumberIRL40S212IRL40S212-NDIRL40S212PBF
DescriptionMOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current254 A--
Rds On Drain Source Resistance2.4 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge91 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation231 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameStrongIRFET--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Width6.22 mm--
BrandInfineon / IR--
Forward Transconductance Min256 S--
Fall Time84 ns--
Product TypeMOSFET--
Rise Time154 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time88 ns--
Typical Turn On Delay Time39 ns--
Part # AliasesSP001568454--
Unit Weight0.139332 oz--
निर्माता भाग # विवरण RFQ
Infineon / IR
Infineon / IR
IRL40S212 MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl
Infineon Technologies
Infineon Technologies
IRL40S212 MOSFET N-CH 40V 195A
IRL40S212-ND नयाँ र मौलिक
IRL40S212PBF नयाँ र मौलिक
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