IRGIB10B60KD1P

IRGIB10B60KD1P vs IRGIB10B60KD1P. vs IRGIB10B60KD1PBF

 
PartNumberIRGIB10B60KD1PIRGIB10B60KD1P.IRGIB10B60KD1PBF
DescriptionIGBT Transistors 600V Low-Vceon
ManufacturerInfineon-IR
Product CategoryIGBT Transistors-IC Chips
RoHSY--
TechnologySi--
Package / CaseTO-220FP-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C16 A--
Pd Power Dissipation44 W--
Minimum Operating Temperature- 55 C--
PackagingTube--
Height9.02 mm--
Length10.67 mm--
Width4.83 mm--
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity2000--
SubcategoryIGBTs--
Part # AliasesSP001549794--
Unit Weight0.081130 oz--
निर्माता भाग # विवरण RFQ
Infineon / IR
Infineon / IR
IRGIB10B60KD1P IGBT Transistors 600V Low-Vceon
Infineon Technologies
Infineon Technologies
IRGIB10B60KD1P IGBT Transistors 600V Low-Vceon
IRGIB10B60KD1P. नयाँ र मौलिक
IRGIB10B60KD1PBF नयाँ र मौलिक
IRGIB10B60KD1PBF. नयाँ र मौलिक
Top