IRG7PH42UD-E

IRG7PH42UD-EP vs IRG7PH42UD-EP,G7PH42UD-E vs IRG7PH42UD-EP,IRG7PH42UD

 
PartNumberIRG7PH42UD-EPIRG7PH42UD-EP,G7PH42UD-EIRG7PH42UD-EP,IRG7PH42UD
DescriptionIGBT Transistors 1200V Trench IGBT Generic Ind App
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C85 A--
Pd Power Dissipation320 W--
Minimum Operating Temperature- 55 C--
PackagingTube--
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001533730--
Unit Weight1.340411 oz--
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
IRG7PH42UD-EP IGBT Transistors 1200V Trench IGBT Generic Ind App
Infineon Technologies
Infineon Technologies
IRG7PH42UD-EP IGBT Transistors 1200V Trench IGBT Generic Ind App
IRG7PH42UD-EPBF IGBT 1200V ULTRA FAST TO247
IRG7PH42UD-EP,G7PH42UD-E नयाँ र मौलिक
IRG7PH42UD-EP,IRG7PH42UD नयाँ र मौलिक
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