IRG4PH50SP

IRG4PH50SPBF vs IRG4PH50SPBF,G4PH50S vs IRG4PH50SPBF,G4PH50S,IRG

 
PartNumberIRG4PH50SPBFIRG4PH50SPBF,G4PH50SIRG4PH50SPBF,G4PH50S,IRG
DescriptionIGBT Transistors 1200V DC-1kHz
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage1.75 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C57 A--
Pd Power Dissipation200 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max33 A--
Height20.7 mm (Max)--
Length15.87 mm (Max)--
Width5.31 mm (Max)--
BrandInfineon / IR--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001533562--
Unit Weight1.340411 oz--
निर्माता भाग # विवरण RFQ
Infineon / IR
Infineon / IR
IRG4PH50SPBF IGBT Transistors 1200V DC-1kHz
IRG4PH50SPBFEL Trans IGBT Chip N-CH 1.2KV 57A 3-Pin(3+Tab) TO-247AC (Alt: IRG4PH50SPBFEL)
IRG4PH50SPBF,G4PH50S नयाँ र मौलिक
IRG4PH50SPBF,G4PH50S,IRG नयाँ र मौलिक
Infineon Technologies
Infineon Technologies
IRG4PH50SPBF IGBT Transistors 1200V DC-1kHz
Top