IRG4PH40UD2-E

IRG4PH40UD2-EP vs IRG4PH40UD2-E vs IRG4PH40UD2-E,IRG4PH40UD

 
PartNumberIRG4PH40UD2-EPIRG4PH40UD2-EIRG4PH40UD2-E,IRG4PH40UD
DescriptionIGBT Transistors 1200V UltraFast 5-40kHz
ManufacturerInfineonIR-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2.43 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C41 A--
Pd Power Dissipation160 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max41 A--
Height20.8 mm--
Length16.1 mm--
Width5.5 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001533572--
Unit Weight1.340411 oz--
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
IRG4PH40UD2-EP IGBT Transistors 1200V UltraFast 5-40kHz
IRG4PH40UD2-EP IGBT Transistors 1200V UltraFast 5-40kHz
IRG4PH40UD2-E नयाँ र मौलिक
IRG4PH40UD2-E,IRG4PH40UD नयाँ र मौलिक
IRG4PH40UD2-EP,IRG4PH40U नयाँ र मौलिक
IRG4PH40UD2-EP. नयाँ र मौलिक
IRG4PH40UD2-EPBF नयाँ र मौलिक
IRG4PH40UD2-EPBF. नयाँ र मौलिक
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