IRFS59N10DT

IRFS59N10DTRLP vs IRFS59N10DTRLP-CUT TAPE vs IRFS59N10DTRLPBF

 
PartNumberIRFS59N10DTRLPIRFS59N10DTRLP-CUT TAPEIRFS59N10DTRLPBF
DescriptionMOSFET MOSFT 100V 59A 25mOhm 76nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current59 A--
Rds On Drain Source Resistance25 mOhms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge76 nC--
Minimum Operating Temperature- 55 C--
Pd Power Dissipation200 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time90 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesSP001557452--
Unit Weight0.139332 oz--
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
IRFS59N10DTRLP MOSFET MOSFT 100V 59A 25mOhm 76nC
IRFS59N10DTRRP MOSFET N-CH 100V 59A D2PAK
IRFS59N10DTRLP RF Bipolar Transistors MOSFET MOSFT 100V 59A 25mOhm 76nC
IRFS59N10DTRLP-CUT TAPE नयाँ र मौलिक
IRFS59N10DTRRPBF नयाँ र मौलिक
IRFS59N10DTRLPBF नयाँ र मौलिक
Top