IRFB59

IRFB59N10DPBF vs IRFB59N10D FB59N10D vs IRFB59N10D

 
PartNumberIRFB59N10DPBFIRFB59N10D FB59N10DIRFB59N10D
DescriptionMOSFET MOSFT 100V 59A 25mOhm 76nC
ManufacturerInfineon-IR/VISHAY
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current59 A--
Rds On Drain Source Resistance32 mOhms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge76 nC--
Pd Power Dissipation200 W--
ConfigurationSingle--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesSP001560232--
Unit Weight0.211644 oz--
निर्माता भाग # विवरण RFQ
Infineon / IR
Infineon / IR
IRFB59N10DPBF MOSFET MOSFT 100V 59A 25mOhm 76nC
IRFB59N10D FB59N10D नयाँ र मौलिक
IRFB59N10D नयाँ र मौलिक
IRFB59N10DPBF,FB59N10D,I नयाँ र मौलिक
Infineon Technologies
Infineon Technologies
IRFB59N10DPBF MOSFET N-CH 100V 59A TO-220AB
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