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| PartNumber | IRFB4227PBF | IRFB4227PBF,IRFB4227 | IRFB4227PBF,IRFB4227, |
| Description | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 65 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 70 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 330 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 49 S | - | - |
| Fall Time | 31 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | - | - |
| Typical Turn On Delay Time | 33 ns | - | - |
| Part # Aliases | SP001565892 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFB4227PBF | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg | |
| IRFB4227PBF | MOSFET N-CH 200V 65A TO-220AB | ||
| IRFB4227PBF,IRFB4227 | नयाँ र मौलिक | ||
| IRFB4227PBF,IRFB4227, | नयाँ र मौलिक | ||
| IRFB4227PBF,IRFB4227,FB4 | नयाँ र मौलिक | ||
| IRFB4227PBF-MX | नयाँ र मौलिक |