 |  | | |
| PartNumber | IRF840PBF | IRF840P | IRF840PB |
| Description | MOSFET N-CH 500V HEXFET MOSFET | ||
| Manufacturer | Vishay | VISHAY | VISHAY |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220AB-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 850 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 63 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Series | IRF | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 4.9 S | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 23 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 49 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | SIHF840-E3 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRF840PBF | MOSFET N-CH 500V HEXFET MOSFET | |
| IRF840P | नयाँ र मौलिक | ||
| IRF840PB | नयाँ र मौलिक | ||
| IRF840PBF , MM3Z9V1B | नयाँ र मौलिक | ||
| IRF840PBF,IRF740PBF | नयाँ र मौलिक | ||
| IRF840PBF,IRF840, | नयाँ र मौलिक | ||
| IRF840PBF,IRF840,IRF840B | नयाँ र मौलिक | ||
| IRF840PBF,IRF840A,IRF840 | नयाँ र मौलिक | ||
Vishay |
IRF840PBF | MOSFET N-CH 500V 8A TO-220AB |