 |  | | |
| PartNumber | IRF7807VD2PBF | IRF7807VD2 | IRF7807VD2TR |
| Description | MOSFET 30V FETKY 30 VBRD 25mOhms 9.5nC | MOSFET N-CH 30V 8.3A 8-SOIC | MOSFET N-CH 30V 8.3A 8-SOIC |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 8.3 A | - | - |
| Rds On Drain Source Resistance | 25 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 9.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | FETKY MOSFET & Schottky Diode | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 2.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 1.2 ns | - | - |
| Factory Pack Quantity | 95 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11 ns | - | - |
| Typical Turn On Delay Time | 6.3 ns | - | - |
| Part # Aliases | SP001575258 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7807VD2PBF | MOSFET 30V FETKY 30 VBRD 25mOhms 9.5nC | |
Infineon Technologies |
IRF7807VD2 | MOSFET N-CH 30V 8.3A 8-SOIC | |
| IRF7807VD2PBF | MOSFET N-CH 30V 8.3A 8-SOIC | ||
| IRF7807VD2TR | MOSFET N-CH 30V 8.3A 8-SOIC | ||
| IRF7807VD2TRPBF | IGBT Transistors MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 9.5nC | ||
| IRF7807VD2TRPBF. | नयाँ र मौलिक |