 | | |
| PartNumber | IRF7104TRPBF | IRF7104PBF |
| Description | MOSFET MOSFT DUAL PCh -20V 2.3A | MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 2.3 A | 2.3 A |
| Rds On Drain Source Resistance | 250 mOhms | 250 mOhms |
| Vgs Gate Source Voltage | 12 V | 12 V |
| Qg Gate Charge | 9.3 nC | 9.3 nC |
| Pd Power Dissipation | 2 W | 2 W |
| Configuration | Dual | Dual |
| Packaging | Reel | Tube |
| Height | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm |
| Transistor Type | 2 P-Channel | 2 P-Channel |
| Width | 3.9 mm | 3.9 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 3800 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001564756 | SP001565336 |
| Unit Weight | 0.019048 oz | 0.019048 oz |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Type | - | Power MOSFET |
| Fall Time | - | 30 ns |
| Rise Time | - | 16 ns |
| Typical Turn Off Delay Time | - | 42 ns |
| Typical Turn On Delay Time | - | 12 ns |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF7104TRPBF | MOSFET MOSFT DUAL PCh -20V 2.3A | |
| IRF7104TRPBF | MOSFET 2P-CH 20V 2.3A 8-SOIC | ||
| IRF7104PBF | IGBT Transistors MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC | ||
Infineon Technologies |
IRF7104PBF | MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC | |
| IRF7104TRPBF-CUT TAPE | नयाँ र मौलिक | ||
| IRF7104 | MOSFET Transistor, Matched Pair, P-Channel, SO | ||
| IRF7104TR | 2.3 A, 20 V, 0.25 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |