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| PartNumber | IRF640NSTRRPBF | IRF640NSTRRPBF-CUT TAPE | IRF640NSTRR |
| Description | MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC | 18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET | |
| Manufacturer | Infineon | - | IR |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | D2PAK-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 150 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 44.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Reel |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 6.8 S | - | - |
| Fall Time | 5.5 ns | - | 5.5 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 19 ns | - | 19 ns |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns | - | 23 ns |
| Typical Turn On Delay Time | 10 ns | - | 10 ns |
| Part # Aliases | SP001561802 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 150 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 18 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V to 4 V |
| Rds On Drain Source Resistance | - | - | 150 mOhms |
| Qg Gate Charge | - | - | 44.7 nC |
| Forward Transconductance Min | - | - | 6.8 S |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon / IR |
IRF640NSTRRPBF | MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC | |
| IRF640NSTRRPBF-CUT TAPE | नयाँ र मौलिक | ||
| IRF640NSTRR | 18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
Infineon Technologies |
IRF640NSTRRPBF | Darlington Transistors MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC |