 | |  | |
| PartNumber | IRF540NSTRLPBF | IRF540NSTRRPBF | IRF540NSPBF |
| Description | MOSFET MOSFT 100V 33A 44mOhm 47.3nC | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | MOSFET N-CH 100V 33A D2PAK |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 33 A | 33 A | - |
| Rds On Drain Source Resistance | 44 mOhms | 44 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 47.3 nC | 47.3 nC | - |
| Pd Power Dissipation | 3.8 W | 3.8 W | - |
| Configuration | Single | Single | Single |
| Packaging | Reel | Reel | Tube |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001563324 | SP001571284 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Channel Mode | - | Enhancement | Enhancement |
| Type | - | HEXFET Power MOSFET | - |
| Forward Transconductance Min | - | 21 S | - |
| Fall Time | - | 35 ns | 35 ns |
| Rise Time | - | 35 ns | 35 ns |
| Typical Turn Off Delay Time | - | 39 ns | 39 ns |
| Typical Turn On Delay Time | - | 11 ns | 11 ns |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 3.8 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 33 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 44 mOhms |
| Qg Gate Charge | - | - | 47.3 nC |
| Forward Transconductance Min | - | - | 21 S |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF540NSTRLPBF | MOSFET MOSFT 100V 33A 44mOhm 47.3nC | |
| IRF540NSTRRPBF | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | ||
| IRF540NSPBF | MOSFET N-CH 100V 33A D2PAK | ||
| IRF540NSTRLPBF | MOSFET N-CH 100V 33A D2PAK | ||
| IRF540NSTRRPBF | Darlington Transistors MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | ||
| IRF540NSTRLPBF-CUT TAPE | नयाँ र मौलिक | ||
| IRF540NSTRRPBF-CUT TAPE | नयाँ र मौलिक | ||
| IRF540NS | MOSFET Transistor, N-Channel, TO-263AB | ||
| IRF540NS , MAX6502UKP035 | नयाँ र मौलिक | ||
| IRF540NSBF | नयाँ र मौलिक | ||
| IRF540NSPBF(94-2358) | नयाँ र मौलिक | ||
| IRF540NSPBF(94-2358PBF) | नयाँ र मौलिक | ||
| IRF540NSTR | नयाँ र मौलिक | ||
| IRF540NSTRL | MOSFET Transistor, N-Channel, TO-263AB | ||
| IRF540NSTRLPBF , 2SJ490 | नयाँ र मौलिक | ||
| IRF540NSTRLPBF,IRF5210ST | नयाँ र मौलिक | ||
| IRF540NSTRLPBF,IRF5210STRLPBF,IRF5210S,IRF540 | नयाँ र मौलिक | ||
| IRF540NSTRLPBF,IRF540NS, | नयाँ र मौलिक | ||
| IRF540NSTRLPBF,IRF540NSP | नयाँ र मौलिक | ||
| IRF540NSTRPBF | नयाँ र मौलिक | ||
| IRF540NSTRR | HEXFET N-CH MOSFET 33A 100V D2PAK, PK |