 |  | | |
| PartNumber | IRF530PBF | IRF530SPBF | IRF530S |
| Description | MOSFET N-CH 100V HEXFET MOSFET | MOSFET N-CH 100V HEXFET MOSFET D2-PA | MOSFET RECOMMENDED ALT 844-IRF530SPBF |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | N |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220AB-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 14 A | - | - |
| Rds On Drain Source Resistance | 160 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 26 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 88 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | Tube |
| Series | IRF | IRF | IRF |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 5.1 S | - | - |
| Fall Time | 24 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 34 ns | - | - |
| Factory Pack Quantity | 50 | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 23 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | IRF520SPBF | - | - |
| Unit Weight | 0.211644 oz | 0.068654 oz | 0.211644 oz |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRF530PBF | MOSFET N-CH 100V HEXFET MOSFET | |
| IRF530SPBF | MOSFET N-CH 100V HEXFET MOSFET D2-PA | ||
| IRF530STRLPBF | MOSFET N-Chan 100V 14 Amp | ||
| IRF530STRRPBF | MOSFET N-CH 100V HEXFET MOSFET D2-PA | ||
| IRF530S | MOSFET RECOMMENDED ALT 844-IRF530SPBF | ||
| IRF530STRL | MOSFET RECOMMENDED ALT 844-IRF530STRLPBF | ||
Infineon Technologies |
IRF530NSTRLPBF | MOSFET MOSFT 100V 17A 90mOhm 24.7nC | |
| IRF530NSTRRPBF | MOSFET N-CH 100V 17A D2PAK | ||
| IRF530NS | MOSFET N-CH 100V 17A D2PAK | ||
| IRF530NSTRLPBF | MOSFET N-CH 100V 17A D2PAK | ||
| IRF530NSPBF | Darlington Transistors MOSFET 100V 1 N-CH HEXFET 90mOhms 24.7nC | ||
Infineon / IR |
IRF530NSPBF | MOSFET 100V 1 N-CH HEXFET 90mOhms 24.7nC | |
| IRF530NSTRLPBF-CUT TAPE | नयाँ र मौलिक | ||
| IRF530NSTRR | नयाँ र मौलिक | ||
| IRF530NSPBF,IRF530NS | नयाँ र मौलिक | ||
| IRF530NSTRLPBF,IRF530NS, | नयाँ र मौलिक | ||
| IRF530NSTRLPBF,IRF530NSP | नयाँ र मौलिक | ||
| IRF530PBF IRF530 | नयाँ र मौलिक | ||
| IRF530PBF,IRF5305PBF,IRF | नयाँ र मौलिक | ||
| IRF530PBF/IRF530NPBF | नयाँ र मौलिक | ||
| IRF530S 100V 14A (92918 | नयाँ र मौलिक | ||
| IRF531 | MOSFET Transistor, N-Channel, TO-220AB | ||
| IRF531. | नयाँ र मौलिक | ||
| IRF531FI | नयाँ र मौलिक | ||
| IRF531N | नयाँ र मौलिक | ||
| IRF531R | नयाँ र मौलिक | ||
| IRF532FI | नयाँ र मौलिक | ||
| IRF532NS | नयाँ र मौलिक | ||
| IRF5330N | नयाँ र मौलिक | ||
| IRF533FI | नयाँ र मौलिक | ||
| IRF5340 | नयाँ र मौलिक | ||
Vishay |
IRF530STRR | MOSFET N-CH 100V 14A D2PAK | |
| IRF530S | MOSFET N-CH 100V 14A D2PAK | ||
| IRF530STRL | MOSFET N-CH 100V 14A D2PAK | ||
| IRF530STRRPBF | MOSFET N-CH 100V 14A D2PAK | ||
| IRF530SPBF | Darlington Transistors MOSFET N-Chan 100V 14 Amp | ||
| IRF530PBF | IGBT Transistors MOSFET N-Chan 100V 14 Amp | ||
| IRF530STRLPBF | IGBT Transistors MOSFET N-Chan 100V 14 Amp | ||
| IRF530STRPBF | नयाँ र मौलिक | ||
| IRF530NSTRL | 17 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| IRF530NSTRPBF | नयाँ र मौलिक | ||
| IRF533 | MOSFET Transistor, N-Channel, TO-220AB | ||
ON Semiconductor |
IRF530N_R4942 | MOSFET N-CH 100V 22A TO-220AB | |
| IRF532 | Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |