IRF3709ST

IRF3709STRLPBF vs IRF3709STRL vs IRF3709STRR

 
PartNumberIRF3709STRLPBFIRF3709STRLIRF3709STRR
DescriptionMOSFET 30V 1 N-CH HEXFET 9mOhms 27nCMOSFET N-CH 30V 90A D2PAKMOSFET N-CH 30V 90A D2PAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance10.5 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge27 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation120 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
TypeSmps MOSFET--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time9.2 ns--
Product TypeMOSFET--
Rise Time171 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesSP001559576--
Unit Weight0.139332 oz--
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
IRF3709STRLPBF MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
IRF3709STRL MOSFET N-CH 30V 90A D2PAK
IRF3709STRR MOSFET N-CH 30V 90A D2PAK
IRF3709STRRPBF MOSFET N-CH 30V 90A D2PAK
IRF3709STRLPBF RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
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