| PartNumber | IRF3706LPBF | IRF3706SPBF | IRF3706PBF |
| Description | MOSFET 20V 1 N-CH HEXFET 8.5mOhms 23nC | MOSFET 20V 1 N-CH HEXFET 8.5mOhms 23nC | MOSFET 20V 1 N-CH HEXFET 8.5mOhms 23nC |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | Through Hole |
| Package / Case | TO-262-3 | TO-263-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 77 A | 77 A | 77 A |
| Rds On Drain Source Resistance | 10.5 mOhms | 10.5 mOhms | 10.5 mOhms |
| Vgs Gate Source Voltage | 12 V | 12 V | 12 V |
| Qg Gate Charge | 23 nC | 23 nC | 23 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 88 W | 88 W | 88 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 4.4 mm | 15.65 mm |
| Length | 10.2 mm | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | Smps MOSFET | Smps MOSFET | Smps MOSFET |
| Width | 4.5 mm | 9.25 mm | 4.4 mm |
| Brand | Infineon / IR | Infineon / IR | Infineon / IR |
| Fall Time | 4.8 ns | 4.8 ns | 4.8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 87 ns | 87 ns | 87 ns |
| Factory Pack Quantity | 3200 | 3200 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17 ns | 17 ns | 17 ns |
| Typical Turn On Delay Time | 6.8 ns | 6.8 ns | 6.8 ns |
| Unit Weight | 0.084199 oz | 0.139332 oz | 0.211644 oz |
| Part # Aliases | - | SP001561640 | SP001563152 |