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| PartNumber | IRF2807ZSTRLPBF | IRF2807ZSTRRPBF |
| Description | MOSFET MOSFT 75V 89A 9.4mOhm 71nC | MOSFET 75V 1 N-CH HEXFET 9.4mOhms 71nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | 40 V |
| Id Continuous Drain Current | 89 A | 280 A |
| Rds On Drain Source Resistance | 9.4 mOhms | 2 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V |
| Qg Gate Charge | 110 nC | 160 nC |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 170 W | 330 W |
| Configuration | Single | Single |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Forward Transconductance Min | 67 S | 130 S |
| Fall Time | 45 ns | 130 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 79 ns | 120 ns |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001564328 | SP001563194 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Vgs Gate Source Voltage | - | 20 V |
| Minimum Operating Temperature | - | - 55 C |
| Channel Mode | - | Enhancement |
| Typical Turn Off Delay Time | - | 40 ns |
| Typical Turn On Delay Time | - | 18 ns |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF2807ZSTRLPBF | MOSFET MOSFT 75V 89A 9.4mOhm 71nC | |
| IRF2807ZSTRRPBF | MOSFET N-CH 75V 75A D2PAK | ||
| IRF2807ZSTRLPBF | IGBT Transistors MOSFET MOSFT 75V 89A 9.4mOhm 71nC | ||
Infineon / IR |
IRF2807ZSTRRPBF | MOSFET 75V 1 N-CH HEXFET 9.4mOhms 71nC | |
Vishay |
IRF2807ZSTRL | MOSFET N-CH 75V 75A D2PAK | |
| IRF2807ZSTRR | MOSFET N-CH 75V 75A D2PAK |