 |  | | |
| PartNumber | IRF1902GTRPBF | IRF1902PBF | IRF1902GPBF |
| Description | MOSFET MOSFT 20V 4.2A 85mOhm 5nC | MOSFET N-CH 20V 4.2A 8-SOIC | MOSFET N-CH 20V 4.2A 8SOIC |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.2 A | - | - |
| Rds On Drain Source Resistance | 85 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 700 mV | - | - |
| Qg Gate Charge | 7.5 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 5.6 S | - | - |
| Fall Time | 19 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001561612 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon / IR |
IRF1902TRPBF | MOSFET MOSFT 20V 4.2A 85mOhm 5nC | |
| IRF1902GTRPBF | MOSFET MOSFT 20V 4.2A 85mOhm 5nC | ||
Infineon Technologies |
IRF1902PBF | MOSFET N-CH 20V 4.2A 8-SOIC | |
| IRF1902GPBF | MOSFET N-CH 20V 4.2A 8SOIC | ||
| IRF1902TRPBF | IGBT Transistors MOSFET MOSFT 20V 4.2A 85mOhm 5nC | ||
| IRF1902GTRPBF | IGBT Transistors MOSFET MOSFT 20V 4.2A 85mOhm 5nC | ||
| IRF1902 | MOSFET Transistor, N-Channel, SO | ||
| IRF1902TR | 4200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |