| PartNumber | IPZ40N04S58R4ATMA1 | IPZ40N04S53R1ATMA1 | IPZ40N04S55R4ATMA1 |
| Description | MOSFET N-CHANNEL_30/40V | MOSFET N-CHANNEL_30/40V | MOSFET N-CHANNEL_30/40V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 13.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 34 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 1 mm | 1 mm | 1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 2 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2 ns | - | - |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 3 ns | - | - |
| Typical Turn On Delay Time | 3 ns | - | - |
| Part # Aliases | IPZ40N04S5-8R4 SP001153438 | IPZ40N04S5-3R1 SP001152006 | IPZ40N04S5-5R4 SP001153440 |
| Unit Weight | 0.001242 oz | - | - |