IPW60R190P

IPW60R190P6 vs IPW60R190P6 , 2SJ279 vs IPW60R190P6 6R190P6

 
PartNumberIPW60R190P6IPW60R190P6 , 2SJ279IPW60R190P6 6R190P6
DescriptionMOSFET HIGH POWER_PRC/PRFRM
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current20.2 A--
Rds On Drain Source Resistance171 mOhms--
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge37 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation151 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOS--
PackagingTube--
Height21.1 mm--
Length16.13 mm--
SeriesCoolMOS P6--
Transistor Type1 N-Channel--
Width5.21 mm--
BrandInfineon Technologies--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity240--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPW60R190P6FKSA1 SP001017090--
Unit Weight1.340411 oz--
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
IPW60R190P6 MOSFET HIGH POWER_PRC/PRFRM
IPW60R190P6FKSA1 MOSFET N-CH 600V 20.2A TO247
IPW60R190P6 - Bulk (Alt: IPW60R190P6)
IPW60R190P6 , 2SJ279 नयाँ र मौलिक
IPW60R190P6 6R190P6 नयाँ र मौलिक
IPW60R190P6,60R190 नयाँ र मौलिक
IPW60R190P6,IPW60R190C6 नयाँ र मौलिक
Top