| PartNumber | IPU60R950C6BKMA1 | IPU60R950C6AKMA1 |
| Description | MOSFET N-Ch 650V 4.4A IPAK-3 | MOSFET LOW POWER_LEGACY |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 4.4 A | 4.4 A |
| Rds On Drain Source Resistance | 860 mOhms | 860 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 13 nC | 13 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 37 W | 37 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Tube | Tube |
| Height | 6.22 mm | 6.22 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | IPU60R950 | CoolMOS C6 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 2.38 mm | 2.38 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 13 ns | 13 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 8 ns | 8 ns |
| Factory Pack Quantity | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 60 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns |
| Part # Aliases | IPU60R950C6 IPU60R950C6XK SP000931532 | IPU60R950C6AKMA1 SP001292888 |
| Unit Weight | 0.012102 oz | 0.139332 oz |
| Forward Transconductance Min | - | - |
| Development Kit | - | - |