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| PartNumber | IPU60R2K1CEAKMA1 | IPU60R2K1CEBKMA1 |
| Description | MOSFET | MOSFET N-Ch 6000V 2.3A IPAK-3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Tube | Tube |
| Height | 6.22 mm | 6.22 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | CoolMOS CE | - |
| Width | 2.38 mm | 2.38 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPU60R2K1CE SP001493880 | IPU60R2K1CEBKMA1 SP001276064 |
| Unit Weight | 0.011993 oz | 0.012102 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Id Continuous Drain Current | - | 2.3 A |
| Rds On Drain Source Resistance | - | 2.1 Ohms |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 6.7 nC |
| Minimum Operating Temperature | - | - 40 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 22 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Fall Time | - | 50 ns |
| Rise Time | - | 7 ns |
| Typical Turn Off Delay Time | - | 30 ns |
| Typical Turn On Delay Time | - | 7 ns |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPU60R2K1CEAKMA1 | MOSFET | |
| IPU60R2K1CEAKMA1 | Trans MOSFET N-CH 600V 3.7A Tube | ||
| IPU60R2K1CEBKMA1 | MOSFET N-CH 600V TO-251-3 | ||
Infineon Technologies |
IPU60R2K1CEBKMA1 | MOSFET N-Ch 6000V 2.3A IPAK-3 | |
| IPU60R2K1CE | Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | ||
| IPU60R2K1CE HF | नयाँ र मौलिक | ||
| IPU60R2K1CEBKMA1 , 2SJ19 | नयाँ र मौलिक |