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| PartNumber | IPP147N03L G | IPP147N03LG | IPP147N03LG,147N03L |
| Description | MOSFET N-Ch 30V 20A TO220-3 OptiMOS 3 | Power Field-Effect Transistor, 20AI(D),30V,0.0217ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-220AB | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 14.7 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 31 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.4 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12 ns | - | - |
| Typical Turn On Delay Time | 3.1 ns | - | - |
| Part # Aliases | IPP147N03LGHKSA1 SP000266315 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP147N03L G | MOSFET N-Ch 30V 20A TO220-3 OptiMOS 3 | |
Infineon Technologies |
IPP147N03L G | MOSFET N-CH 30V 20A TO-220-3 | |
| IPP147N03LG | Power Field-Effect Transistor, 20AI(D),30V,0.0217ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-220AB | ||
| IPP147N03LG,147N03L | नयाँ र मौलिक | ||
| IPP147N03LGHKSA1 | नयाँ र मौलिक | ||
| IPP147N03LGS | नयाँ र मौलिक |