IPI60R190

IPI60R190C6 vs IPI60R190C6XKSA1 vs IPI60R190C6XK

 
PartNumberIPI60R190C6IPI60R190C6XKSA1IPI60R190C6XK
DescriptionMOSFET N-Ch 650V 20.2A I2PAK-3 CoolMOS C6MOSFET HIGH POWER_LEGACYTrans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI60R190C6XKSA1)
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current20.2 A--
Rds On Drain Source Resistance190 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge63 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation151 W--
ConfigurationSingle--
TradenameCoolMOSCoolMOS-
PackagingTubeTube-
Height9.45 mm9.45 mm-
Length10.2 mm10.2 mm-
SeriesCoolMOS C6--
Transistor Type1 N-Channel--
Width4.5 mm4.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time9 nS--
Product TypeMOSFETMOSFET-
Rise Time11 ns--
Factory Pack Quantity500--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time110 nS--
Part # AliasesIPI60R190C6XKSA1 IPI6R19C6XK SP000660618IPI60R190C6 IPI6R19C6XK SP000660618-
Unit Weight0.084199 oz0.084199 oz-
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
IPI60R190C6 MOSFET N-Ch 650V 20.2A I2PAK-3 CoolMOS C6
IPI60R190C6XKSA1 MOSFET N-CH 600V 20.2A TO262
Infineon Technologies
Infineon Technologies
IPI60R190C6XKSA1 MOSFET HIGH POWER_LEGACY
IPI60R190C6XK Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI60R190C6XKSA1)
IPI60R190C6 Darlington Transistors MOSFET N-Ch 650V 20.2A I2PAK-3 CoolMOS C6
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