IPG20N06S4L2 stock, IPG20N06S4L2, IPG20N06S4L26AATMA1

IPG20N06S4L26AATMA1 vs IPG20N06S4L26ATMA1


PartNumber	IPG20N06S4L26AATMA1	IPG20N06S4L26ATMA1
Description	MOSFET N-Ch 55V 20A TDSON-8	MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TDSON-8	TDSON-8
Number of Channels	2 Channel	2 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	60 V	60 V
Id Continuous Drain Current	20 A	20 A
Rds On Drain Source Resistance	21 mOhms, 21 mOhms	21 mOhms, 21 mOhms
Vgs th Gate Source Threshold Voltage	1.2 V	1.2 V
Vgs Gate Source Voltage	16 V	16 V
Qg Gate Charge	20 nC, 20 nC	20 nC, 20 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	33 W	33 W
Configuration	Dual	Dual
Channel Mode	Enhancement	Enhancement
Qualification	AEC-Q101	AEC-Q101
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	1 mm	1.27 mm
Length	5.9 mm	5.9 mm
Series	OptiMOS-T2	OptiMOS-T2
Transistor Type	2 N-Channel	2 N-Channel
Width	5.15 mm	5.15 mm
Brand	Infineon Technologies	Infineon Technologies
Fall Time	10 ns, 10 ns	10 ns, 10 ns
Product Type	MOSFET	MOSFET
Rise Time	1.5 ns, 1.5 ns	1.5 ns, 1.5 ns
Factory Pack Quantity	5000	5000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	18 ns, 18 ns	18 ns, 18 ns
Typical Turn On Delay Time	5 ns, 5 ns	5 ns, 5 ns
Part # Aliases	IPG20N06S4L-26A SP001023848	IPG20N06S4L-26 IPG2N6S4L26XT SP000705588
Unit Weight	0.003474 oz	0.003527 oz

Search Part Number : "IPG20N06S4L2", Match & Start with "IPG20N06S4L2" - Total : 6

निर्माता	भाग #	विवरण
Infineon Technologies	IPG20N06S4L26AATMA1	MOSFET N-Ch 55V 20A TDSON-8
	IPG20N06S4L26ATMA1	MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
	IPG20N06S4L26ATMA1	MOSFET 2N-CH 60V 20A TDSON-8
	IPG20N06S4L26AATMA1	RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8
	IPG20N06S4L26AATMA1-CUT TAPE	नयाँ र मौलिक
	IPG20N06S4L26XT	नयाँ र मौलिक