PartNumber | IPD60R600C6ATMA1 | IPD60R600C6BTMA1 |
Description | MOSFET N-Ch 600V 20.2A DPAK-2 | MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS C6 |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Id Continuous Drain Current | 7.3 A | 7.3 A |
Rds On Drain Source Resistance | 540 mOhms | 540 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 20.5 nC | 20.5 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 63 W | 63 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | CoolMOS | - |
Packaging | Reel | Reel |
Height | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm |
Series | CoolMOS C6 | XPD60R600 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies |
Fall Time | 13 ns | 13 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 9 ns | 9 ns |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 80 ns | 80 ns |
Typical Turn On Delay Time | 12 ns | 12 ns |
Part # Aliases | IPD60R600C6 SP001117726 | IPD60R600C6 IPD60R600C6XT SP000660622 |
Unit Weight | 0.139332 oz | 0.011993 oz |