PartNumber | IPD60R380P6ATMA1 | IPD60R380P6BTMA1 |
Description | MOSFET N-Ch 600V 10.6A DPAK-2 | MOSFET N-Ch 600V 10.6A DPAK-2 |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Configuration | Single | Single |
Tradename | CoolMOS | - |
Packaging | Reel | Reel |
Height | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm |
Series | CoolMOS P6 | CoolMOS P6 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Part # Aliases | IPD60R380P6 SP001135814 | IPD60R380P6 SP001017052 |
Unit Weight | 0.139332 oz | 0.000212 oz |
Id Continuous Drain Current | - | 10.6 A |
Rds On Drain Source Resistance | - | 342 mOhms |
Vgs th Gate Source Threshold Voltage | - | 3.5 V |
Vgs Gate Source Voltage | - | 20 V |
Qg Gate Charge | - | 19 nC |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 150 C |
Pd Power Dissipation | - | 83 W |
Channel Mode | - | Enhancement |
Fall Time | - | 7 ns |
Rise Time | - | 6 ns |
Typical Turn Off Delay Time | - | 33 ns |
Typical Turn On Delay Time | - | 12 ns |