PartNumber | IPD60R2K0C6ATMA1 | IPD60R2K0C6BTMA1 |
Description | MOSFET LOW POWER_LEGACY | MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Packaging | Reel | Reel |
Series | CoolMOS C6 | XPD60R2 |
Brand | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Part # Aliases | IPD60R2K0C6 SP001117714 | IPD60R2K0C6 IPD60R2K0C6XT SP000799132 |
Unit Weight | 0.013662 oz | 0.139332 oz |
Mounting Style | - | SMD/SMT |
Package / Case | - | TO-252-3 |
Number of Channels | - | 1 Channel |
Transistor Polarity | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | 600 V |
Id Continuous Drain Current | - | 2.4 A |
Rds On Drain Source Resistance | - | 1.8 Ohms |
Vgs th Gate Source Threshold Voltage | - | 2.5 V |
Vgs Gate Source Voltage | - | 20 V |
Qg Gate Charge | - | 6.7 nC |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 150 C |
Pd Power Dissipation | - | 22.3 W |
Configuration | - | Single |
Channel Mode | - | Enhancement |
Tradename | - | CoolMOS |
Height | - | 2.3 mm |
Length | - | 6.5 mm |
Transistor Type | - | 1 N-Channel |
Width | - | 6.22 mm |
Fall Time | - | 50 ns |
Rise Time | - | 7 ns |
Typical Turn Off Delay Time | - | 30 ns |
Typical Turn On Delay Time | - | 7 ns |