IPD33 stock, IPD33, IPD33CN10NGATMA1

IPD33CN10NGATMA1 vs IPD33CN10NGBUMA1


PartNumber	IPD33CN10NGATMA1	IPD33CN10NGBUMA1
Description	MOSFET MV POWER MOS	MOSFET N-Ch 100V 27A DPAK-2 OptiMOS 2
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	-
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	100 V	100 V
Id Continuous Drain Current	27 A	27 A
Rds On Drain Source Resistance	25 mOhms	25 mOhms
Vgs th Gate Source Threshold Voltage	3 V	2 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	18 nC	24 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	58 W	58 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	2.3 mm	2.3 mm
Length	6.5 mm	6.5 mm
Series	OptiMOS 2	-
Width	6.22 mm	6.22 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	30 S	15 S
Fall Time	4 ns	4 ns
Product Type	MOSFET	MOSFET
Rise Time	21 ns	21 ns
Factory Pack Quantity	2500	2500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	17 ns	17 ns
Typical Turn On Delay Time	11 ns	11 ns
Part # Aliases	G IPD33CN10N SP001127812	G IPD33CN10N IPD33CN10NGXT SP000096458
Unit Weight	0.139332 oz	0.139332 oz
Number of Channels	-	1 Channel
Transistor Type	-	1 N-Channel

Search Part Number : "IPD33", Match & Start with "IPD33" - Total : 8

निर्माता	भाग #	विवरण
Infineon Technologies	IPD33CN10NGATMA1	MOSFET MV POWER MOS
	IPD33CN10NGATMA1	MOSFET N-CH 100V 27A TO252-3
	IPD33CN10NGBUMA1	MOSFET N-CH 100V 27A TO252-3
Infineon Technologies	IPD33CN10NGBUMA1	MOSFET N-Ch 100V 27A DPAK-2 OptiMOS 2
	IPD33CN10N	नयाँ र मौलिक
	IPD33CN10N G	MOSFET N-Ch 100V 27A DPAK-2 OptiMOS 2
	IPD33CN10NG	नयाँ र मौलिक
	IPD33CN10NGBUMA1 , 2SD21	नयाँ र मौलिक