IPD180N10N3G

IPD180N10N3GATMA1 vs IPD180N10N3GBTMA1

 
PartNumberIPD180N10N3GATMA1IPD180N10N3GBTMA1
DescriptionMOSFET MV POWER MOSMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon Technologies
Product TypeMOSFETMOSFET
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Part # AliasesG IPD180N10N3 SP000900132G IPD180N10N3 IPD18N1N3GXT SP000482438
Unit Weight0.139332 oz0.139332 oz
Number of Channels-1 Channel
Transistor Polarity-N-Channel
Vds Drain Source Breakdown Voltage-100 V
Id Continuous Drain Current-43 A
Rds On Drain Source Resistance-14.7 mOhms
Vgs th Gate Source Threshold Voltage-2 V
Vgs Gate Source Voltage-20 V
Qg Gate Charge-25 nC
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 175 C
Pd Power Dissipation-71 W
Configuration-Single
Channel Mode-Enhancement
Tradename-OptiMOS
Series-XPD180N10
Transistor Type-1 N-Channel
Forward Transconductance Min-20 S
Fall Time-5 ns
Rise Time-12 ns
Typical Turn Off Delay Time-19 ns
Typical Turn On Delay Time-12 ns
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
IPD180N10N3GATMA1 MOSFET MV POWER MOS
IPD180N10N3GBTMA1 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
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IPD180N10N3GATMA1 MV POWER MOS
IPD180N10N3GATMA1-CUT TAPE नयाँ र मौलिक
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IPD180N10N3G Darlington Transistors MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
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