 | |  | |
| PartNumber | IPD122N10N3GATMA1 | IPD127N06L G | IPD122N10N3GBTMA1 |
| Description | MOSFET | MOSFET N-Ch 60V 50A DPAK-2 | MOSFET N-CH 100V 59A TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 60 V | - |
| Id Continuous Drain Current | 59 A | 50 A | - |
| Rds On Drain Source Resistance | 12.2 mOhms | 12.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 26 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 94 W | 136 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS 3 | OptiMOS 2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 29 S | - | - |
| Fall Time | 5 ns | 13 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 14 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 24 ns | 39 ns | - |
| Typical Turn On Delay Time | 14 ns | 9 ns | - |
| Part # Aliases | G IPD122N10N3 SP001127828 | IPD127N06LGBTMA1 IPD127N6LGXT SP000443740 | - |
| Unit Weight | 0.017637 oz | 0.139332 oz | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD122N10N3GATMA1 | MOSFET | |
| IPD12CN10NGATMA1 | MOSFET MV POWER MOS | ||
| IPD127N06L G | MOSFET N-Ch 60V 50A DPAK-2 | ||
| IPD122N10N3GATMA1 | MOSFET N-CH 100V 59A | ||
| IPD12CNE8N G | MOSFET N-CH 85V 67A TO252-3 | ||
| IPD12N03LB G | MOSFET N-CH 30V 30A TO-252 | ||
| IPD122N10N3GBTMA1 | MOSFET N-CH 100V 59A TO252-3 | ||
| IPD127N06LGBTMA1 | MOSFET N-CH 60V 50A TO-252 | ||
| IPD12CN10NGATMA1 | MOSFET N-CH 100V 67A TO252-3 | ||
| IPD12CN10NGBUMA1 | MOSFET N-CH 100V 67A TO252-3 | ||
Infineon Technologies |
IPD127N06LGBTMA1 | MOSFET MV POWER MOS | |
| IPD122N10N3 G | MOSFET N-Ch 100V 59A DPAK-2 OptiMOS 3 | ||
| IPD122N10N3G | 100V,59A,N Channel Power MOSFET | ||
| IPD122N10N3GB | नयाँ र मौलिक | ||
| IPD122N10N3GBTMA1 , 2SD2 | नयाँ र मौलिक | ||
| IPD127N06L | नयाँ र मौलिक | ||
| IPD127N06LG | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.0127OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | ||
| IPD127N06LGXT | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD127N06LGBTMA1) | ||
| IPD12C10N G | नयाँ र मौलिक | ||
| IPD12CN10N | Infineon N-Channel Power MOSFET IPD12CN10N G - TO252-3 | ||
| IPD12CN10NG | Trans MOSFET N-CH 100V 67A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD12CN10NG) | ||
| IPD12CN10NGATMA1 , 2SD20 | नयाँ र मौलिक | ||
| IPD12CN10NGBUMA1 , 2SD21 | नयाँ र मौलिक | ||
| IPD12CNE8N | नयाँ र मौलिक | ||
| IPD12CNE8NG | नयाँ र मौलिक | ||
| IPD12N03 | नयाँ र मौलिक | ||
| IPD12N03L | 30 A, 30 V, 0.0147 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | ||
| IPD12N03LAG | नयाँ र मौलिक | ||
| IPD12N03LB | नयाँ र मौलिक | ||
| IPD12N03LBG | नयाँ र मौलिक | ||
| IPD12S016PW | नयाँ र मौलिक | ||
| IPD12CN10N G | MOSFET N-Ch 100V 67A DPAK-2 OptiMOS 2 | ||
| IPD127N06L G | MOSFET N-Ch 60V 50A DPAK-2 |