IPB60R099C6

IPB60R099C6 vs IPB60R099C6ATMA1 vs IPB60R099C6 6R099C6

 
PartNumberIPB60R099C6IPB60R099C6ATMA1IPB60R099C6 6R099C6
DescriptionMOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6MOSFET HIGH POWER_LEGACY
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current37.9 A--
Rds On Drain Source Resistance99 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge119 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation278 W--
ConfigurationSingleSingle-
TradenameCoolMOSCoolMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesCoolMOS C6--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time6 ns--
Product TypeMOSFETMOSFET-
Rise Time12 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time75 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPB60R099C6ATMA1 IPB6R99C6XT SP000687468IPB60R099C6 IPB6R99C6XT SP000687468-
Unit Weight0.139332 oz0.139332 oz-
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
IPB60R099C6 MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6
IPB60R099C6ATMA1 MOSFET N-CH 600V 37.9A TO263
Infineon Technologies
Infineon Technologies
IPB60R099C6ATMA1 MOSFET HIGH POWER_LEGACY
IPB60R099C6 MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6
IPB60R099C6 6R099C6 नयाँ र मौलिक
IPB60R099C6S नयाँ र मौलिक
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