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| PartNumber | IPB230N06L3 | IPB230N06L3G | IPB230N06L3 G |
| Description | Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IGBT Transistors MOSFET N-Ch 200V 30A D2PAK-2 | |
| Manufacturer | - | INF | I |
| Product Category | - | FETs - Single | FETs - Single |
| Series | - | - | IPB230N06 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPB230N06L3GATMA1 |
| Unit Weight | - | - | 0.068654 oz |
| Package Case | - | - | TO-263-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 36 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 3 ns |
| Rise Time | - | - | 3 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 30 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Rds On Drain Source Resistance | - | - | 23 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 19 ns |
| Typical Turn On Delay Time | - | - | 9 ns |
| Channel Mode | - | - | Enhancement |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
| IPB230N06L3 | नयाँ र मौलिक | ||
| IPB230N06L3G | Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB230N06L3 G | IGBT Transistors MOSFET N-Ch 200V 30A D2PAK-2 | ||
Infineon Technologies |
IPB230N06L3GATMA1 | MOSFET N-CH 60V 30A TO263-3 |