| PartNumber | IPB160N04S4-H1 | IPB160N04S4H1ATMA1 | IPB160N04S4LH1ATMA1 |
| Description | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | MOSFET N-CHANNEL 30/40V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 160 A | 160 A | - |
| Rds On Drain Source Resistance | 1.4 mOhms | 1.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 137 nC | 137 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 167 W | 167 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS-T2 | xPB160N04 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 33 ns | 33 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22 ns | 22 ns | - |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | 29 ns | - |
| Typical Turn On Delay Time | 28 ns | 28 ns | - |
| Part # Aliases | IPB160N04S4H1ATMA1 IPB16N4S4H1XT SP000711252 | IPB160N04S4-H1 IPB16N4S4H1XT SP000711252 | IPB160N04S4L-H1 SP000979640 |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |