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| PartNumber | IPB123N10N3 G | IPB123N10N | IPB123N10N3G |
| Description | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | Trans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R (Alt: SP000485968) | |
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 58 A | - | - |
| Rds On Drain Source Resistance | 10.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 35 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 94 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | XPB123N10 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 29 S | - | - |
| Fall Time | 5 ns | 5 ns | 5 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | 8 ns | 8 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 24 ns | 24 ns | 24 ns |
| Typical Turn On Delay Time | 14 ns | 14 ns | 14 ns |
| Part # Aliases | IPB123N10N3GATMA1 IPB123N1N3GXT SP000485968 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Part Aliases | - | IPB123N10N3GATMA1 IPB123N10N3GXT SP000485968 | G IPB123N10N3 IPB123N10N3GXT SP000485968 |
| Package Case | - | TO-252-3 | TO-263-3 |
| Pd Power Dissipation | - | 94 W | 94 W |
| Vgs Gate Source Voltage | - | 20 V | +/- 20 V |
| Id Continuous Drain Current | - | 58 A | 58 A |
| Vds Drain Source Breakdown Voltage | - | 100 V | 100 V |
| Vgs th Gate Source Threshold Voltage | - | 2.7 V | 2.7 V |
| Rds On Drain Source Resistance | - | 12.3 mOhms | 10.7 mOhms |
| Qg Gate Charge | - | 26 nC | 26 nC |
| Forward Transconductance Min | - | 57 S 29 S | 57 S |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB123N10N3 G | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | |
| IPB123N10N3GATMA1 | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | ||
| IPB123N10N3GATMA1 | MOSFET N-CH 100V 58A TO263-3 | ||
| IPB123N10N3GATMA1-CUT TAPE | नयाँ र मौलिक | ||
| IPB123N10N | नयाँ र मौलिक | ||
| IPB123N10N3G | Trans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R (Alt: SP000485968) | ||
| IPB123N10N3GS | नयाँ र मौलिक |