 |  | |
| PartNumber | IPB096N03LG | IPB096N03LGATMA1 |
| Description | Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | MOSFET N-CH 30V 35A TO-263-3 |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
| IPB096N03LG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
Infineon Technologies |
IPB096N03LGATMA1 | MOSFET N-CH 30V 35A TO-263-3 |