 | | |
| PartNumber | IPB057N06N | IPB057N06NATMA1 |
| Description | MOSFET N-Ch 60V 45A D2PAK-2 | MOSFET N-Ch 60V 45A D2PAK-2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PG-TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 45 A | 45 A |
| Rds On Drain Source Resistance | 5.7 mOhms | 4.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V |
| Vgs Gate Source Voltage | 10 V | 20 V |
| Qg Gate Charge | 27 nC | 32 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 83 W | 83 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Series | OptiMOS 5 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 36 S | 36 S |
| Fall Time | 7 ns | 7 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 12 ns | 12 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | 20 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns |
| Part # Aliases | IPB057N06NATMA1 IPB57N6NXT SP000962140 | IPB057N06N IPB57N6NXT SP000962140 |
| Unit Weight | 0.068654 oz | 0.139332 oz |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB057N06N | MOSFET N-Ch 60V 45A D2PAK-2 | |
| IPB057N06NATMA1 | MOSFET N-Ch 60V 45A D2PAK-2 | ||
| IPB057N06N | Trans MOSFET N-CH 60V 45A | ||
| IPB057N06NATMA1 | Darlington Transistors MOSFET N-Ch 60V 45A D2PAK-2 | ||
| IPB057N06N3 G | नयाँ र मौलिक | ||
| IPB057N07N | नयाँ र मौलिक |