 | |  | |
| PartNumber | IPB055N03L G | IPB055N03LGATMA1 | IPB055N03LG |
| Description | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | MOSFET LV POWER MOS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 5.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 68 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 4 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5.2 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 6.7 ns | - | - |
| Part # Aliases | IPB055N03LGATMA1 IPB55N3LGXT SP000304110 | G IPB055N03L IPB55N3LGXT SP000304110 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB055N03L G | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | |
| IPB055N03LGATMA1 | MOSFET N-CH 30V 50A TO-263-3 | ||
Infineon Technologies |
IPB055N03LGATMA1 | MOSFET LV POWER MOS | |
| IPB055N03LG | नयाँ र मौलिक |