IPB054N06N3G

IPB054N06N3GATMA1 vs IPB054N06N3G vs IPB054N06N3GATMA1 , 2SD1

 
PartNumberIPB054N06N3GATMA1IPB054N06N3GIPB054N06N3GATMA1 , 2SD1
DescriptionMOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Alt: IPB054N06N3 G)
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance4.4 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge82 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation115 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3XPB054N06-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min47 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time68 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time24 ns--
Part # AliasesG IPB054N06N3 IPB54N6N3GXT SP000446782--
Unit Weight0.139332 oz--
Part Aliases-G IPB054N06N3 IPB054N06N3GXT SP000446782-
Package Case-TO-263-3-
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
IPB054N06N3GATMA1 MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3
IPB054N06N3GATMA1 MOSFET N-CH 60V 80A TO263-3
IPB054N06N3GATMA1-CUT TAPE नयाँ र मौलिक
IPB054N06N3G Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Alt: IPB054N06N3 G)
IPB054N06N3GATMA1 , 2SD1 नयाँ र मौलिक
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