 |  | | |
| PartNumber | IPA60R800CEXKSA1 | IPA60R800CE | IPA60R800CEXKSA1 , 2SD18 |
| Description | MOSFET N-Ch 600V 5.6A TO220FP-3 | MOSFET CONSUMER | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 5.6 A | - | - |
| Rds On Drain Source Resistance | 800 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 17.2 nC | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 27 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Tube | Tube | - |
| Height | 16.15 mm | - | - |
| Length | 10.65 mm | - | - |
| Series | CoolMOS CE | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.85 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 12 ns | 12 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | 7 ns | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns | 50 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Part # Aliases | IPA60R800CEXKSA1 SP001276046 | - | - |
| Unit Weight | 0.081130 oz | 0.081130 oz | - |
| Part Aliases | - | IPA60R800CE SP001276046 | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 27 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 5.6 A | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Rds On Drain Source Resistance | - | 800 mOhms | - |
| Qg Gate Charge | - | 17.2 nC | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA60R800CEXKSA1 | MOSFET N-Ch 600V 5.6A TO220FP-3 | |
| IPA60R800CE | MOSFET CONSUMER | ||
Infineon Technologies |
IPA60R800CEXKSA1 | MOSFET N-CH 600V TO-220-3 | |
| IPA60R800CEXKSA1 , 2SD18 | नयाँ र मौलिक |