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| PartNumber | IMZ4T108 | IMZ4T108 , 2SD1101B | IMZ4T108-RM-LF |
| Description | Bipolar Transistors - BJT NPN/PNP 32V 500MA | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Transistor Polarity | NPN, PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 32 V | - | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 0.5 A | - | - |
| Gain Bandwidth Product fT | 200 MHz, 250 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | IMZ4T | - | - |
| DC Current Gain hFE Max | 560 | - | - |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.6 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Continuous Collector Current | 500 mA | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | IMZ4 | - | - |