| PartNumber | IKZ50N65ES5XKSA1 | IKZ50N65NH5XKSA1 | IKZ50N65EH5XKSA1 |
| Description | IGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-2 | IGBT Transistors IGBT PRODUCTS | IGBT Transistors IGBT PRODUCTS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247-4 | TO-247-4 | TO-247-4 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.35 V | 1.65 V | 1.65 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 80 A | 85 A | 85 A |
| Pd Power Dissipation | 274 W | 273 W | 273 W |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | TRENCHSTOP 5 S5 | TRENCHSTOP 5 H5 | TRENCHSTOP 5 H5 |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 80 A | - | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 240 | 240 | 240 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | TRENCHSTOP | TRENCHSTOP | TRENCHSTOP |
| Part # Aliases | IKZ50N65ES5 SP001636074 | IKZ50N65NH5 SP001160042 | IKZ50N65EH5 SP001160038 |
| Unit Weight | 0.211644 oz | - | 0.053885 oz |
| Height | - | 20.7 mm | 20.7 mm |
| Length | - | 15.87 mm | 15.87 mm |
| Width | - | 5.31 mm | 5.31 mm |