![]() | |||
| PartNumber | IGD06N60TATMA1 | IGD01N120H2 | IGD01N120H2BUMA1 |
| Description | IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop | IGBT Transistors HIGH SPEED 2 TECH 1200A 1A | IGBT Transistors IGBT PRODUCTS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 12 A | - | - |
| Pd Power Dissipation | 88 W | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Series | TRENCHSTOP IGBT | IGD01N120 | - |
| Packaging | Reel | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | TRENCHSTOP | - | - |
| Part # Aliases | IGD06N60T IGD6N6TXT SP000960698 | IGD01N120H2BUMA1 IGD1N12H2XT SP000014523 | IGD01N120H2 IGD1N12H2XT SP000014523 |
| Unit Weight | 0.011175 oz | 0.139332 oz | - |
| Continuous Collector Current Ic Max | - | 3.2 A | - |
| Height | - | 2.3 mm | - |
| Length | - | 6.5 mm | - |
| Width | - | 6.22 mm | - |
| Moisture Sensitive | - | Yes | - |