 |  | | |
| PartNumber | HN4A56JU(TE85L,F) | HN4A51JTE85LF | HN4B01JE(TE85L,F) |
| Description | Bipolar Transistors - BJT USV PLN TRANSISTOR Pd=300mW F=1MHz | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | Bipolar Transistors - BJT Vceo=-50V Vceo=50V |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Packaging | Reel | Reel | Reel |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 4000 |
| Subcategory | Transistors | Transistors | Transistors |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SOT-25-5 | - |
| Transistor Polarity | - | PNP | NPN, PNP |
| Configuration | - | Dual | Dual |
| Collector Emitter Voltage VCEO Max | - | - 120 V | 50 V |
| Collector Base Voltage VCBO | - | - 120 V | 60 V |
| Emitter Base Voltage VEBO | - | - 5 V | 5 V |
| Collector Emitter Saturation Voltage | - | - 0.3 V | - |
| Maximum DC Collector Current | - | - 100 mA | 0.15 A |
| Gain Bandwidth Product fT | - | 100 MHz | 80 MHz |
| Series | - | HN4A51 | HN4B01 |
| DC Current Gain hFE Max | - | 700 | - |
| Continuous Collector Current | - | - 100 mA | - |
| DC Collector/Base Gain hfe Min | - | 200 | 120 |
| Pd Power Dissipation | - | 300 mW | 100 mW |
| Unit Weight | - | 0.000494 oz | - |
| Maximum Operating Temperature | - | - | + 150 C |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Toshiba |
HN4A56JU(TE85L,F) | Bipolar Transistors - BJT USV PLN TRANSISTOR Pd=300mW F=1MHz | |
| HN4A51JTE85LF | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | ||
| HN4B01JE(TE85L,F) | Bipolar Transistors - BJT Vceo=-50V Vceo=50V | ||
| HN4B01JE(TE85L,F) | Bipolar Transistors - BJT Vceo=-50V Vceo=50V | ||
| HN4A51JTE85LF | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | ||
| HN4A56JU(TE85L,F) | नयाँ र मौलिक | ||
| HN4A06J(TE85L,F) | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | ||
| HN48364P | नयाँ र मौलिक | ||
| HN4A06J | नयाँ र मौलिक | ||
| HN4A08J | नयाँ र मौलिक | ||
| HN4A51J | नयाँ र मौलिक | ||
| HN4A71FK | नयाँ र मौलिक | ||
| HN4B04J | नयाँ र मौलिक | ||
| HN4B101J(TE85L,F | नयाँ र मौलिक | ||
| HN4B101J(TE85LF) | नयाँ र मौलिक | ||
| HN4B04J(TE85L,F) | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | ||
| HN4834CG | नयाँ र मौलिक | ||
| HN4843CG | नयाँ र मौलिक | ||
| HN4844CG | नयाँ र मौलिक | ||
| HN4855CG | नयाँ र मौलिक | ||
| HN4870CG | नयाँ र मौलिक | ||
| HN4875CG | नयाँ र मौलिक | ||
| HN4B101J (TE85L,F) | नयाँ र मौलिक | ||
| HN4B101J(TE85L | नयाँ र मौलिक | ||
| HN4A06J(TE85LF)CT-ND | नयाँ र मौलिक | ||
| HN4A06J(TE85LF)DKR-ND | नयाँ र मौलिक | ||
| HN4A51JTE85LFCT-ND | नयाँ र मौलिक | ||
| HN4A51JTE85LFDKR-ND | नयाँ र मौलिक | ||
| HN4A51JTE85LFTR-ND | नयाँ र मौलिक | ||
| HN4A56JU(TE85LF)CT-ND | नयाँ र मौलिक | ||
| HN4A56JU(TE85LF)DKR-ND | नयाँ र मौलिक | ||
| HN4A56JU(TE85LF)TR-ND | नयाँ र मौलिक | ||
| HN4B01JE(TE85LF)CT-ND | नयाँ र मौलिक | ||
| HN4B01JE(TE85LF)DKR-ND | नयाँ र मौलिक | ||
| HN4B01JE(TE85LF)TR-ND | नयाँ र मौलिक | ||
| HN4B04J(TE85LF)CT-ND | नयाँ र मौलिक | ||
| HN4B04J(TE85LF)DKR-ND | नयाँ र मौलिक | ||
| HN4B04J(TE85LF)TR-ND | नयाँ र मौलिक | ||
| HN4842CG | नयाँ र मौलिक | ||
| HN4A06J / 53 | नयाँ र मौलिक | ||
| HN4A06J(TE85LF) | नयाँ र मौलिक | ||
| HN4A56JU | नयाँ र मौलिक | ||
| HN4A56JU(TE85LF) | नयाँ र मौलिक | ||
| HN4A74FK | नयाँ र मौलिक | ||
| HN4B01JE | नयाँ र मौलिक | ||
| HN4B01JE(TE85LF) | नयाँ र मौलिक | ||
| HN4B04J(TE85LF) | नयाँ र मौलिक | ||
| HN4B06J | नयाँ र मौलिक | ||
| HN4B101J | नयाँ र मौलिक | ||
| HN4B101J , 2SB1424-R | नयाँ र मौलिक |