HN2A01FE

HN2A01FE-GR(TE85LFCT-ND vs HN2A01FE-GR(TE85LFDKR-ND vs HN2A01FE

 
PartNumberHN2A01FE-GR(TE85LFCT-NDHN2A01FE-GR(TE85LFDKR-NDHN2A01FE
Description
Manufacturer--Toshiba Semiconductor and Storage
Product Category--Transistors (BJT) - Arrays
Series---
Packaging--Digi-ReelR
Package Case--SOT-563, SOT-666
Mounting Type--Surface Mount
Supplier Device Package--ES6
Power Max--100mW
Transistor Type--2 PNP (Dual)
Current Collector Ic Max--150mA
Voltage Collector Emitter Breakdown Max--50V
DC Current Gain hFE Min Ic Vce--200 @ 2mA, 6V
Vce Saturation Max Ib Ic--300mV @ 10mA, 100mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--800MHz
निर्माता भाग # विवरण RFQ
HN2A01FE-GR(TE85LFCT-ND नयाँ र मौलिक
HN2A01FE-GR(TE85LFDKR-ND नयाँ र मौलिक
HN2A01FE-GR(TE85LFTR-ND नयाँ र मौलिक
HN2A01FE-Y(TE85LFCT-ND नयाँ र मौलिक
HN2A01FE-Y(TE85LFDKR-ND नयाँ र मौलिक
HN2A01FE-Y(TE85LFTR-ND नयाँ र मौलिक
HN2A01FE नयाँ र मौलिक
HN2A01FE-Y नयाँ र मौलिक
HN2A01FE-Y(TE85LF नयाँ र मौलिक
Top