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| PartNumber | HN1B01F-GR(TE85L,F | HN1B01FU-GR,LF |
| Description | Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp |
| Manufacturer | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SM-6 | SOT-363-6 |
| Transistor Polarity | PNP | NPN, PNP |
| Configuration | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V |
| Collector Base Voltage VCBO | 50 V | 60 V, - 50 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 0.1 V | 100 mV |
| Maximum DC Collector Current | 150 mA | 150 mA |
| Gain Bandwidth Product fT | 80 MHz | 150 MHz, 120 MHz |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 125 C | + 125 C |
| Series | HN1B01 | HN1B01 |
| DC Current Gain hFE Max | 400 | 400 |
| Packaging | Reel | Reel |
| Brand | Toshiba | Toshiba |
| DC Collector/Base Gain hfe Min | 120 | 120 |
| Pd Power Dissipation | 300 mW | 200 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | Transistors | Transistors |
| Technology | - | Si |
| Unit Weight | - | 0.000265 oz |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Toshiba |
HN1B01F-GR(TE85L,F | Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A | |
| HN1B01FU-GR,LF | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp | ||
| HN1B01F-GR(TE85L,F | Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A | ||
| HN1B01FU-GR,LF | TRANS NPN/PNP 50V 0.15A US6-PLN | ||
ON Semiconductor |
HN1B01FDW1T1G | Bipolar Transistors - BJT 200mA 60V Dual Complementary | |
| HN1B01FDW1T1G | Bipolar Transistors - BJT 200mA 60V Dual Complementary | ||
| HN1B01FDW1T1 | TRANS NPN/PNP 50V 0.2A SC74 | ||
| HN1B01F-Y(TE85L,F) | Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A | ||
| HN1B01F | नयाँ र मौलिक | ||
| HN1B01F-Y | नयाँ र मौलिक | ||
| HN1B01FDW | नयाँ र मौलिक | ||
| HN1B01FDW1 | नयाँ र मौलिक | ||
| HN1B01FU | नयाँ र मौलिक | ||
| HN1B01FU(1AG) | नयाँ र मौलिक | ||
| HN1B01FU-Y L,F,T | नयाँ र मौलिक | ||
| HN1B01FU-Y(TE85L,F | नयाँ र मौलिक | ||
| HN1B01F-GR(TE85LFCT-ND | नयाँ र मौलिक | ||
| HN1B01F-GR(TE85LFDKR-ND | नयाँ र मौलिक | ||
| HN1B01FU-GRLFCT-ND | नयाँ र मौलिक | ||
| HN1B01FU-GRLFDKR-ND | नयाँ र मौलिक | ||
| HN1B01FU-GRLFTR-ND | नयाँ र मौलिक | ||
| HN1B01FU-Y(LFT)DKR-ND | नयाँ र मौलिक | ||
| HN1B01FU-Y(LFT)TR-ND | नयाँ र मौलिक | ||
| HN1B01F-Y(TE85L.F) | नयाँ र मौलिक | ||
| HN1B01F-GR | 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR | ||
| HN1B01F-GR TE85L | नयाँ र मौलिक | ||
| HN1B01F-GR(1AG) | नयाँ र मौलिक | ||
| HN1B01F-GR(TE85LF | नयाँ र मौलिक | ||
| HN1B01F-Y TE85L | नयाँ र मौलिक | ||
| HN1B01F-Y(TE85L) | नयाँ र मौलिक | ||
| HN1B01F-Y(TE85R) | नयाँ र मौलिक | ||
| HN1B01FDW1T1-D | नयाँ र मौलिक | ||
| HN1B01FDWT1G | नयाँ र मौलिक | ||
| HN1B01FU T5RSN,F,T | नयाँ र मौलिक | ||
| HN1B01FU Y | नयाँ र मौलिक | ||
| HN1B01FU,GR | नयाँ र मौलिक | ||
| HN1B01FU-GR(L,F,T | नयाँ र मौलिक | ||
| HN1B01FU-GR(T5RF) | नयाँ र मौलिक | ||
| HN1B01FU-GR(TE85LF | नयाँ र मौलिक | ||
| HN1B01FU-GR.T5R.F | नयाँ र मौलिक | ||
| HN1B01FU-GR/1AG | नयाँ र मौलिक | ||
| HN1B01FU-Y SOT363-1AY | नयाँ र मौलिक | ||
| HN1B01FU-Y LFT | नयाँ र मौलिक | ||
| HN1B01FU-Y(1AY) | नयाँ र मौलिक | ||
| HN1B01FU-Y(LFT) | नयाँ र मौलिक | ||
| HN1B01FU-Y(LFT)CT-ND | नयाँ र मौलिक | ||
| HN1B01F-GR(T5L,T) | नयाँ र मौलिक | ||
| HN1B01F-GR(T5LT) | नयाँ र मौलिक | ||
| HN1B01FU-V | नयाँ र मौलिक | ||
| HN1B01FU-Y(L,F,T) | नयाँ र मौलिक |