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| PartNumber | HN1C03F-B(TE85L,F) | HN1C01FYTE85LF | HN1C03FU-A(TE85L,F |
| Description | Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, SM6 | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A | Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-26-6 | SOT-26-6 | SMT-6 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Dual | Dual | Single |
| Collector Emitter Voltage VCEO Max | 20 V | 50 V | 20 V |
| Collector Base Voltage VCBO | 50 V | 60 V | 50 V |
| Emitter Base Voltage VEBO | 25 V | 5 V | 20 V |
| Collector Emitter Saturation Voltage | 42 mV | 0.1 V | 0.042 V |
| Maximum DC Collector Current | 300 mA | 150 mA | 300 mA |
| Gain Bandwidth Product fT | 30 MHz | 80 MHz | 30 MHz |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | HN1C03 | HN1C01 | - |
| DC Current Gain hFE Max | 1200 | 400 | 1200 |
| Packaging | Reel | Reel | Reel |
| Brand | Toshiba | Toshiba | Toshiba |
| DC Collector/Base Gain hfe Min | 200 | 120 | 200 |
| Pd Power Dissipation | 300 mW | 300 mW | 200 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000529 oz | 0.001058 oz | - |
| Continuous Collector Current | - | 150 mA | 300 mA |
| Technology | - | - | Si |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Toshiba |
HN1C03FU-B(TE85L,F | Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6 | |
| HN1C03F-B(TE85L,F) | Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, SM6 | ||
| HN1C01FYTE85LF | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A | ||
| HN1C03FU-A(TE85L,F | Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz | ||
| HN1D01F(TE85L,F) | Diodes - General Purpose, Power, Switching SM6 M8 DIODE (LF) | ||
| HN1C01FYTE85LF | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A | ||
| HN1C01FUGRLFT | Bipolar Transistors - BJT VCEO 50V IC 150mA HFE 120 - 400 150mA | ||
| HN1C03FU-B(TE85L,F | Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6 | ||
| HN1C03F-B(TE85L,F) | Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, SM6 | ||
| HN1C01FYTE85LFCT-ND | नयाँ र मौलिक | ||
| HN1C01FYTE85LFDKR-ND | नयाँ र मौलिक | ||
| HN1C01FYTE85LFTR-ND | नयाँ र मौलिक | ||
| HN1C03F-B(TE85LF)CT-ND | नयाँ र मौलिक | ||
| HN1C03F-B(TE85LF)DKR-ND | नयाँ र मौलिक | ||
| HN1C03F-B(TE85LF)TR-ND | नयाँ र मौलिक | ||
| HN1C03FU-A(TE85LFCT-ND | नयाँ र मौलिक | ||
| HN1C03FU-A(TE85LFDKR-ND | नयाँ र मौलिक | ||
| HN1C03FU-A(TE85LFTR-ND | नयाँ र मौलिक | ||
| HN1D01F(TE85LF)CT-ND | नयाँ र मौलिक | ||
| HN1D01F(TE85LF)DKR-ND | नयाँ र मौलिक | ||
| HN1D01F(TE85LF)TR-ND | नयाँ र मौलिक | ||
| HN1C01FU-YT5LFT | नयाँ र मौलिक | ||
| HN1C01FU/C1G | नयाँ र मौलिक | ||
| HN1C01FUGR | नयाँ र मौलिक | ||
| HN1C01FUGRT5LF | नयाँ र मौलिक | ||
| HN1C03F | नयाँ र मौलिक | ||
| HN1C03F-B | नयाँ र मौलिक | ||
| HN1C03F-B(C3B) | नयाँ र मौलिक | ||
| HN1C03F-B(TE85L) | नयाँ र मौलिक | ||
| HN1C03FU | नयाँ र मौलिक | ||
| HN1C03FU-B | नयाँ र मौलिक | ||
| HN1C03FU-B , MAX6822TUK | नयाँ र मौलिक | ||
| HN1C03FU-B TE85R | नयाँ र मौलिक | ||
| HN1C03FU-B(TE85L) | नयाँ र मौलिक | ||
| HN1C03FU-B(TE85L) SOT | नयाँ र मौलिक | ||
| HN1C03FU-BTE85L | नयाँ र मौलिक | ||
| HN1C03FV-B | नयाँ र मौलिक | ||
| HN1C03FV-BV | नयाँ र मौलिक | ||
| HN1C05FE | नयाँ र मौलिक | ||
| HN1C05FE-A | नयाँ र मौलिक | ||
| HN1C05FE-B | नयाँ र मौलिक | ||
| HN1C05FE-B TE85L.F | नयाँ र मौलिक | ||
| HN1C07F | नयाँ र मौलिक | ||
| HN1C07F(TE85L,F) | नयाँ र मौलिक | ||
| HN1C07F(TE85LF) | नयाँ र मौलिक | ||
| HN1C08F-B | नयाँ र मौलिक | ||
| HN1C26FS | नयाँ र मौलिक | ||
| HN1D01F | नयाँ र मौलिक | ||
| HN1D01F , LM4040BIX3-3.0 | नयाँ र मौलिक | ||
| HN1D01FE | नयाँ र मौलिक |