 | |  | |
| PartNumber | GS8161E36DD-200I | GS8161E36DD-200 | GS8161E36DD-200IV |
| Description | SRAM 2.5 or 3.3V 512K x 36 18M | SRAM 2.5 or 3.3V 512K x 36 18M | SRAM 1.8/2.5V 512K x 36 18M |
| Manufacturer | GSI Technology | GSI Technology | GSI Technology |
| Product Category | SRAM | SRAM | SRAM |
| Packaging | Tray | Tray | Tray |
| Series | GS8161E36DD | GS8161E36DD | GS8161E36DD |
| Brand | GSI Technology | GSI Technology | GSI Technology |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 36 | 36 | 18 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Tradename | SyncBurst | SyncBurst | SyncBurst |
| Memory Size | - | - | 18 Mbit |
| Organization | - | - | 512 k x 36 |
| Access Time | - | - | 6.5 ns |
| Maximum Clock Frequency | - | - | 200 MHz |
| Interface Type | - | - | Parallel |
| Supply Voltage Max | - | - | 2.7 V |
| Supply Voltage Min | - | - | 1.7 V |
| Supply Current Max | - | - | 225 mA, 230 mA |
| Minimum Operating Temperature | - | - | - 40 C |
| Maximum Operating Temperature | - | - | + 85 C |
| Mounting Style | - | - | SMD/SMT |
| Package / Case | - | - | BGA-165 |
| Memory Type | - | - | SDR |
| Type | - | - | DCD Pipeline/Flow Through |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
GSI Technology |
GS8161E36DD-250 | SRAM 2.5 or 3.3V 512K x 36 18M | |
| GS8161E36DD-200I | SRAM 2.5 or 3.3V 512K x 36 18M | ||
| GS8161E36DD-250I | SRAM 2.5 or 3.3V 512K x 36 18M | ||
| GS8161E36DD-200V | SRAM 1.8/2.5V 512K x 36 18M | ||
| GS8161E36DD-200 | SRAM 2.5 or 3.3V 512K x 36 18M | ||
| GS8161E36DD-250V | SRAM 1.8/2.5V 512K x 36 18M | ||
| GS8161E36DD-200IV | SRAM 1.8/2.5V 512K x 36 18M | ||
| GS8161E36DD-250IV | SRAM 1.8/2.5V 512K x 36 18M |