| PartNumber | GB02SLT12-252 | GB02SLT12-214 | GB02SLT12-220 |
| Description | Schottky Diodes & Rectifiers 1200V 2A SiC Schottky Rect. | Schottky Diodes & Rectifiers 1200V 5A Standard | Schottky Diodes & Rectifiers 1200V 2A SiC Schottky Rectifier |
| Manufacturer | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Product Category | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
| RoHS | Y | Y | Y |
| Product | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes |
| Mounting Style | Through Hole | SMD/SMT | Through Hole |
| Package / Case | TO-220AC-2 | DO-214AA-2 | TO-220 |
| If Forward Current | 5 A | 5 A | 2 A |
| Vrrm Repetitive Reverse Voltage | 1.2 kV | 1.2 kV | 1200 V |
| Vf Forward Voltage | 1.5 V | 1.5 V | 1.8 V |
| Ifsm Forward Surge Current | 18 A | 18 A | 18 A |
| Configuration | Single | Single | - |
| Technology | SiC | SiC | SiC |
| Ir Reverse Current | 5 uA | 5 uA | 8 uA |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | GB02SLT12 | GB02SLT12 | GB02SLT12 |
| Packaging | Reel | Reel | Tube |
| Brand | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Pd Power Dissipation | 65 W | 65 W | 42 W |
| Product Type | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
| Factory Pack Quantity | 2500 | 2500 | 50 |
| Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | Diodes & Rectifiers |
| Vr Reverse Voltage | 1.2 kV | 1.2 kV | - |
| Unit Weight | 0.063493 oz | 0.009171 oz | 0.081130 oz |
| Operating Temperature Range | - | - | - 55 C to + 175 C |
| trr Reverse Recovery time | - | - | 17 ns |