FQP8N9

FQP8N90C vs FQP8N90 vs FQP8N90C,FQP6N80C,FQP6N8

 
PartNumberFQP8N90CFQP8N90FQP8N90C,FQP6N80C,FQP6N8
DescriptionMOSFET 900V N-Ch Q-FET advance C-Series
ManufacturerON SemiconductorFSC-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance1.9 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation171 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFQP8N90C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5.5 S--
Fall Time70 ns--
Product TypeMOSFET--
Rise Time110 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time40 ns--
Part # AliasesFQP8N90C_NL--
Unit Weight0.063493 oz--
निर्माता भाग # विवरण RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP8N90C MOSFET 900V N-Ch Q-FET advance C-Series
FQP8N90 नयाँ र मौलिक
FQP8N90C,FQP6N80C,FQP6N8 नयाँ र मौलिक
ON Semiconductor
ON Semiconductor
FQP8N90C MOSFET N-CH 900V 6.3A TO-220
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